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71M6545/71M6545H Data Sheet
6.5
6.5.1
Timing Specifications
Flash Memory
Table 93: Flash Memory Timing Specifications
Parameter
Flash write cycles
Flash data retention
Condition
-40 °C to +85 °C
25 °C
85 °C
Min
20,000
100
10
Typ
Max
Unit
Cycles
Years
Flash byte writes between page or
mass erase operations
Write Time per Byte
Page Erase (1024 bytes)
Mass Erase
6.5.2
SPI Slave
Table 94. SPI Slave Timing Specifications
2
21
21
21
Cycles
μs
ms
ms
Parameter
SPI Setup Time
SPI Hold Time
SPI Output Delay
SPI Recovery Time
SPI Removal Time
SPI Clock High
SPI Clock Low
SPI Clock Freq
SPI Transaction Space
Condition
SPI_DI to SPI_CK rise
SPI_CK rise to SPI_DI
SPI_CK fall to SPI_D0
SPI_CSZ fall to SPI_CK
SPI_CK to SPI_CSZ rise
SPI Freq/MPU Freq
SPI_CSZ rise to SPI_CSZ fall
Min
10
10
10
15
40
40
4.5
Typ
Max
40
2.0
Unit
ns
ns
ns
ns
ns
ns
ns
MHz/MHz
MPU Cycles
6.5.3
EEPROM Interface
Table 95: EEPROM Interface Timing
Write Clock frequency (I C)
Parameter
2
Write Clock frequency (3-wire)
Condition
CKMPU = 4.9 MHz,
Using interrupts
CKMPU = 4.9 MHz,
bit-banging DIO2/3
PLL_FAST = 0
CKMPU = 4.9 MHz
PLL_FAST = 0
PLL_FAST = 1
Min
Typ
310
100
160
500
Max
Unit
kHz
kHz
kHz
v2
123
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